Valence band offsets of Ge/ZnSe(100) studied by synchrotron radiation photoemission

被引:0
|
作者
机构
来源
Wuli Xuebao | / 3卷 / 593-595期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] SYNCHROTRON RADIATION PHOTOEMISSION-STUDIES ON THE PALLADIUM COMPOUND SEMICONDUCTOR INTERFACES - VALENCE BAND STUDIES
    LI, N
    LIN, ZD
    GAO, YL
    WEAVER, JH
    VACUUM, 1992, 43 (5-7) : 587 - 590
  • [32] Modification of band offsets by a ZnSe intralayer at the Si/Ge(111) interface
    Pan, M
    Wilks, SP
    Dunstan, PR
    Pritchard, M
    Williams, RH
    Cammack, DS
    Clark, SA
    APPLIED PHYSICS LETTERS, 1998, 72 (21) : 2707 - 2709
  • [33] Effect of a ZnSe intralayer on the Si/Ge(111) heterojunction band offsets
    Pan, M
    Wilks, SP
    Dunstan, PR
    Pritchard, M
    Williams, RH
    Cammack, DS
    Clark, SA
    THIN SOLID FILMS, 1999, 343 : 605 - 608
  • [34] GaAs clean up studied with synchrotron radiation photoemission
    Tallarida, Massimo
    Adelmann, Christoph
    Delabie, Annelies
    van Elshocht, Sven
    Caymax, Matty
    Schmeisser, Dieter
    E-MRS 2012 SPRING MEETING, SYMPOSIUM M: MORE THAN MOORE: NOVEL MATERIALS APPROACHES FOR FUNCTIONALIZED SILICON BASED MICROELECTRONICS, 2012, 41
  • [35] Valence band electronic structures of heavily boron-doped superconducting diamond studied by synchrotron photoemission spectroscopy
    Yokoya, Takayoshi
    Nakamura, Tetsuya
    Matsushita, Tomohiro
    Muro, Takayuki
    Ikenaga, Eiji
    Kobata, Masaaki
    Kobayashi, Keisuke
    Takano, Yoshihiko
    Nagao, Masanori
    Takenouchi, Tomohiro
    Kawarada, Hiroshi
    Oguchi, Tamio
    NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY, 2007, 17 (01): : 11 - 19
  • [36] DETERMINATION OF VALENCE BAND-STRUCTURE OF INSE BY ANGLE-RESOLVED PHOTOEMISSION USING SYNCHROTRON RADIATION
    LARSEN, PK
    CHIANG, S
    SMITH, NV
    PHYSICAL REVIEW B, 1977, 15 (06): : 3200 - 3210
  • [37] Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy
    Ding, SA
    Barman, SR
    Horn, K
    Yang, H
    Yang, B
    Brandt, O
    Ploog, K
    APPLIED PHYSICS LETTERS, 1997, 70 (18) : 2407 - 2409
  • [38] Tailoring of valence-band offsets at strained Si/Ge interfaces
    Wang, Renzhi
    Huang, Meichun
    Ke, Sanhuang
    Guti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics, 1995, 15 (04):
  • [39] COMPLETE VALENCE-BAND STRUCTURE OF GE DETERMINED BY PHOTOEMISSION
    CHEN, XH
    RANKE, W
    SCHRODERBERGEN, E
    PHYSICAL REVIEW B, 1990, 42 (12): : 7429 - 7433
  • [40] CARBON, FUNCTIONALIZED CARBON, AND HYDROCARBONS STUDIED BY VALENCE BAND PHOTOEMISSION
    SHERWOOD, PMA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 2783 - 2787