Valence band offsets of Ge/ZnSe(100) studied by synchrotron radiation photoemission

被引：0
|
作者：
机构：
来源：
Wuli Xuebao | / 3卷 / 593-595期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] X-RAY PHOTOEMISSION VALENCE-BAND SPECTRA AND THEORETICAL VALENCE-BAND DENSITIES OF STATES FOR GE, GAAS, AND ZNSE
    POLLAK, RA
    CHADI, DJ
    COHEN, ML
    SHIRLEY, DA
    KOWALCZYK, S
    LEY, L
    JOANNOPOULOS, JD
    PHYSICAL REVIEW LETTERS, 1972, 29 (16) : 1103 - +
  • [22] Band offsets of polar and nonpolar GaN/ZnO heterostructures determined by synchrotron radiation photoemission spectroscopy
    Liu, J. W.
    Kobayashi, A.
    Toyoda, S.
    Kamada, H.
    Kikuchi, A.
    Ohta, J.
    Fujioka, H.
    Kumigashira, H.
    Oshima, M.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (04): : 956 - 959
  • [23] Band offsets and stability of BeTe/ZnSe (100) heterojunctions
    Bernardini, F
    Peressi, M
    Fiorentini, V
    PHYSICAL REVIEW B, 2000, 62 (24) : R16302 - R16305
  • [24] Full valence band photoemission from liquid water using EUV synchrotron radiation
    Winter, B
    Weber, R
    Widdra, W
    Dittmar, M
    Faubel, M
    Hertel, IV
    JOURNAL OF PHYSICAL CHEMISTRY A, 2004, 108 (14): : 2625 - 2632
  • [25] Interfaces of Mg and MgOx films with GaAs(100) substrate studied by synchrotron radiation photoemission
    Xu, FQ
    Lu, ED
    Sun, YM
    Pan, HB
    Xu, PS
    Zhang, XY
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1999, 101 : 513 - 515
  • [26] VALENCE-BAND ELECTRONIC-STRUCTURE OF ZN3P2 AS A FUNCTION OF ANNEALING AS STUDIED BY SYNCHROTRON RADIATION PHOTOEMISSION
    NELSON, AJ
    KAZMERSKI, LL
    ENGELHARDT, M
    HOCHST, H
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (03) : 1393 - 1396
  • [27] THERMAL-REACTIONS OF DISILANE ON SI(100) STUDIED BY SYNCHROTRON-RADIATION PHOTOEMISSION
    LIN, DS
    MILLER, T
    CHIANG, TC
    TSU, R
    GREENE, JE
    PHYSICAL REVIEW B, 1993, 48 (16): : 11846 - 11850
  • [28] VALENCE-BAND OFFSETS AT STRAINED SI/GE INTERFACES
    COLOMBO, L
    RESTA, R
    BARONI, S
    PHYSICAL REVIEW B, 1991, 44 (11): : 5572 - 5579
  • [29] PSEUDOPOTENTIAL CALCULATIONS OF THE VALENCE-BAND OFFSETS AT THE ZNSE/GE, ZNSE/GAAS, AND GAAS/GE (110) INTERFACES - EFFECTS OF THE GA AND ZN 3D ELECTRONS
    QTEISH, A
    NEEDS, RJ
    PHYSICAL REVIEW B, 1991, 43 (05): : 4229 - 4235
  • [30] Photoemission study on the valence band of a β-FeSi2 thin film using synchrotron radiation
    Fujimoto, Hitoshi
    Ogawa, Koji
    Takarabe, Kenichi
    Udono, Haruhiko
    Sugiyama, Harue
    Azuma, Junpei
    Takahashi, Kazutoshi
    Kamada, Masao
    DALTON TRANSACTIONS, 2011, 40 (22) : 6023 - 6027
12345