Photoluminescence and x-ray photoelectron study of AlGaAs/GaAs near-surface quantum wells passivated by a novel interface control technique

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Hokkaido Univ, Sapporo, Japan [1 ]
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Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 8 B卷 / 4540-4543期
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Semiconductor quantum wells
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