X-ray photoelectron spectroscopy study of silicon interlayer based surface passivation for AlGaAs/GaAs quantum structures on (111) B surfaces

被引：2
|
作者：
Akazawa, M
Shiozaki, N
Hasegawa, H
机构：
[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0608628, Japan
来源：
JOURNAL DE PHYSIQUE IV | 2006年 / 132卷
关键词：
D O I：
10.1051/jp4:2006132019
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Applicability of the Si interface control layer (Si ICL)-based surface passivation to GaAs and AlGaAs (111)B Surfaces was investigated. An in-situ X-ray photoelectron spectroscopy (XPS) study confirmed formation of the intended passivation structure. MBE grown GaAs and AlGaAs (111)B surfaces showed strong Fermi level pinning. After Si ICL growth, large shifts of the surface Fermi level position were observed. Photoluminescence (PL) measurements were also used to examine the surfaces of AlGaAs/GaAs quantum well and quantum wire structures grown oil the GaAs (111)B substrates. PL intensity reduction caused by surface states was recovered remarkably by the Si ICL-based passivation.
引用
收藏
页码：95 / 99
页数：5
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