X-RAY PHOTOELECTRON SPECTROSCOPY OF A DOPED SILICON SURFACE.

The method of x-ray photoelectron spectroscopy was used to analyze the chemical composition of a surface layer of silicon doped with group VI metals by chemical, electrochemical, and vacuum deposition methods. An investigation was also made of the energy distribution of electrons in a doped silicon layer. The general features of a physicochemical model of a silicon surface doped with group VI metals was developed. It was found that the deposition of a metal on the surface of silicon was possible only under films of metal oxides MeO//2 and MeO//3 of thickness exceeding 20 - 30 A. The thickness of silicon oxide in electrolytic doping could be considerably less. The surface doping of silicon gave rise to localized states in the valence band and in the band gap. Those in the band gap were due to the formation of bonds between silicon and the deposited metal.