INVESTIGATION OF INTERFACE STRUCTURE OF GA FACET GROWN IN THE SI-DOPED GAAS CRYSTALS.

被引：0

作者：

JIANG SINAN

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来源：

| 1982年 / V 3卷 / N 4期

关键词：

CRYSTAL LATTICE - GALLIUM FACET GROWN REGION - INTERFACE STRUCTURE - NORMAL CRYSTAL REGION;

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引用

页码：277 / 281

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