INVESTIGATION OF INTERFACE STRUCTURE OF GA FACET GROWN IN THE SI-DOPED GAAS CRYSTALS.

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作者：
JIANG SINAN
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| 1982年 / V 3卷 / N 4期
关键词：
CRYSTAL LATTICE - GALLIUM FACET GROWN REGION - INTERFACE STRUCTURE - NORMAL CRYSTAL REGION;
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页码：277 / 281
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