Features of metal-insulator-semiconductor diodes with tunnel insulator subjected to UV soaking

被引：0
|
作者：
Radiophysics Department, Shevchenko University, Vladimirskaya 64, 252033 Kiev, Ukraine [1 ]
机构：
来源：
Thin Solid Films | / 1卷 / 226-229期
关键词：
Capacitance - Current voltage characteristics - Electronic density of states - Infrared spectroscopy - Interfaces (materials) - MIS devices - Ultraviolet radiation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of ultraviolet (UV) irradiation on the characteristics of metal-insulator-semiconductor (MIS) structures with various insulator layer thicknesses has been investigated using the methods of dark and light current-voltage, capacitance-voltage characteristics and IR spectroscopy. The observed alteration of diode parameters due to the UV irradiation is shown to involve interface reconstruction: the insulator layer thickness, its composition and the surface state density. The assessment of their contribution to the exhibited device parameters shows that the initial insulator thickness plays an important role. The most probable origin of interface transformation is discussed.
引用
收藏
相关论文
共 50 条
  • [21] RELAXATION OF OPTICALLY INDUCED INVERSION-LAYERS IN METAL-INSULATOR-SEMICONDUCTOR TUNNEL-DIODES
    DAHLKE, WE
    JAIN, S
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1264 - 1271
  • [22] Theoretical study of piezotronic metal-insulator-semiconductor tunnel devices
    Zhang, Qiyuan
    Feng, Xiaolong
    Li, Lijie
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (32)
  • [23] I-V characteristics of Schottky/metal-insulator-semiconductor diodes with tunnel thin barriers
    Sugimura, T
    Tsuzuku, T
    Kasai, Y
    Iiyama, K
    Takamiya, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (7B): : 4521 - 4522
  • [24] LEIT EFFECT IN METAL-INSULATOR-SEMICONDUCTOR TUNNEL-JUNCTIONS
    MCCARTHY, SL
    LAMBE, J
    APPLIED PHYSICS LETTERS, 1978, 33 (10) : 858 - 860
  • [25] METAL-INSULATOR-SEMICONDUCTOR CAPACITORS WITH BISMUTH OXIDE AS INSULATOR
    RAJU, TA
    TALWAI, AS
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4877 - 4878
  • [26] PHOTOELECTRIC PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES WITH A TUNNEL-TRANSPARENT INSULATOR LAYER (REVIEW).
    Val', A.Ya.
    Sachenko, A.V.
    Soviet physics. Semiconductors, 1983, 17 (08): : 865 - 874
  • [27] PHOTOELECTRIC PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR STRUCTURES WITH A TUNNEL-TRANSPARENT INSULATOR LAYER (REVIEW)
    VUL, AY
    SACHENKO, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (08): : 865 - 874
  • [28] Infrared emission from Ge metal-insulator-semiconductor tunneling diodes
    Liao, M. H.
    Cheng, T. -H.
    Liu, C. W.
    APPLIED PHYSICS LETTERS, 2006, 89 (26)
  • [29] Light-emitting diodes based on a metal-insulator-semiconductor structure
    Katok, VB
    Panfilov, MI
    Chaika, GE
    SEMICONDUCTORS, 1997, 31 (06) : 593 - 594
  • [30] Series resistance calculation for the metal-insulator-semiconductor Schottky barrier diodes
    Saglam, M
    Ayyildiz, E
    Gumus, A
    Turut, A
    Efeoglu, H
    Tuzemen, S
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1996, 62 (03): : 269 - 273
12345