DIFFUSION OF NICKEL IN SILICON UNDER CONDITIONS OF THE ACTION OF A CONCENTRATED LUMINOUS FLUX.

被引：0
|
作者：
Dzhuliev, Kh.Kh.
Krevchik, V.D.
Muminov, R.A.
Mamadalimov, A.T.
Makhkamov, Sh.
Nigmanov, O.
机构：
来源：
Applied Solar Energy (English translation of Geliotekhnika) | 1986年 / 22卷 / 01期
关键词：
NICKEL AND ALLOYS - Diffusion - PHOTONS - SOLAR CELLS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The authors are investigating experimentally the process of compensation of silicon with a nickel impurity under conditions of the action of a concentrated flux of photons. A dependence has been found of the depth of compensation on the spectral composition of incident radiation. Diffusion of nickel was carried out from a chemically deposited layer on the surface of silicon wafers 10 multiplied by 6 multiplied by 1. 2 mm, over the course of 10-30 min, in open air. Dependence of the Si(Ni) specimens' resistivity on compensation depth with various diffusion times is shown.
引用
收藏
页码：86 / 88
相关论文
共 50 条
  • [1] Diffusion of zinc into gallium arsenide under conditions of action of concentrated solar radiation
    Dzhuliev, Kh.Kh.
    Kutlimratov, A.
    Mamadalimov, A.T.
    Muminov, R.A.
    Geliotekhnika, 2000, (04): : 76 - 82
  • [2] Destruction of silicon and K - 8 glass during action of concentrated light flux
    Bedilov, R.M.
    Davletov, I.Yu.
    Sabitov, M.S.
    Geliotekhnika, 2002, (01): : 77 - 80
  • [3] Solar desalination under concentrated solar flux and reduced pressure conditions
    Altarawneh, Ibrahem
    Batiha, Mohammad
    Rawadieh, Saleh
    Alnaief, Mohammad
    Tarawneh, Muafag
    SOLAR ENERGY, 2020, 206 (206) : 983 - 996
  • [4] Silicon self-diffusion under extrinsic conditions
    Ural, A
    Griffin, PB
    Plummer, JD
    APPLIED PHYSICS LETTERS, 2001, 79 (26) : 4328 - 4330
  • [5] Phosphorus and boron diffusion in silicon under equilibrium conditions
    Christensen, JS
    Radamson, HH
    Kuznetsov, AY
    Svensson, BG
    APPLIED PHYSICS LETTERS, 2003, 82 (14) : 2254 - 2256
  • [6] THE MODELING OF PLATINUM DIFFUSION IN SILICON UNDER NONEQUILIBRIUM CONDITIONS
    ZIMMERMANN, H
    RYSSEL, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (01) : 256 - 262
  • [7] THE DIFFUSION OF DOPANTS UNDER OXIDIZING ATMOSPHERE IN EXTRINSIC CONDITIONS IN SILICON
    ISHIKAWA, Y
    NAKAMICHI, I
    MATSUMOTO, S
    NIIMI, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C107 - C107
  • [8] Oxygen and silicon diffusion in silica under varying ambient conditions
    Sunder, Kirsten
    Bracht, Hartmut
    DIFFUSION IN MATERIALS - DIMAT2008, 2009, 289-292 : 531 - 539
  • [9] DIFFUSION OF PHOSPHORUS INTO SILICON UNDER CONDITIONS OF CONTROLLED VAPOUR PRESSURE
    COUPLAND, MJ
    PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (472): : 577 - 584
  • [10] LOW CONCENTRATION DIFFUSION IN SILICON UNDER SEALED TUBE CONDITIONS
    GHOSHTAGORE, RN
    SOLID-STATE ELECTRONICS, 1972, 15 (10) : 1113 - +
12345