LONGITUDINAL MODE BEHAVIORS OF 1. 5 mu M RANGE GaInAsP/InP DISTRIBUTED FEEDBACK LASERS.

被引：0

作者：

Itaya, Yoshio

Matsuoka, Takashi

Kuroiwa, Koichi

Ikegami, Tetsuhiko

机构：

[1] Atsugi Electrical Communication Laboratory, Nippon Telegraph and Teleohone Public Corporation, Kanagawa, 243-01, Japan

[2] Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Kanagawa, 243-01, Japan

来源：

IEEE Journal of Quantum Electronics | 1984年 / QE-20卷 / 03期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：230 / 235

共 50 条

[41] 1.3 μm wavelength GaInAsP/InP distributed feedback lasers grown directly on grating substrates by solid source molecular beam epitaxy
Hwang, WY
Baillargeon, JN
Chu, SNG
Sciortino, PF
Cho, AY
1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 109 - 112
[42] TEMPERATURE-RANGE FOR DFB MODE OSCILLATION IN 1.5 MU-M INGAASP/INP DFB LASERS
MATSUOKA, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (08): : 1206 - 1210
[43] CONDITIONS OF LPE GROWTH FOR LATTICE MATCHED GAINASP-INP DH LASERS WITH (100) SUBSTRATE IN RANGE OF 1.2-1.5-MU-M
ARAI, S
ITAYA, Y
SUEMATSU, Y
KISHINO, K
KATAYAMA, S
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) : 2067 - 2068
[44] FLAT-SURFACE BURIED HETEROSTRUCTURE DISTRIBUTED FEEDBACK LASERS OPERATING IN A SINGLE LONGITUDINAL MODE AT 1.5-MU-M WITH LOW CHIRP
NILSSON, S
TANBUNEK, T
BROBERG, B
APPLIED PHYSICS LETTERS, 1987, 51 (25) : 2082 - 2084
[45] A GAINASP/INP TAPERED-WAVE-GUIDE SEMICONDUCTOR-LASER AMPLIFIER INTEGRATED WITH A 1.5 MU-M DISTRIBUTED FEEDBACK LASER
YAZAKI, PA
KOMORI, K
BENDELLI, G
ARAI, S
SUEMATSU, Y
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (12) : 1060 - 1063
[46] THRESHOLD-WAVELENGTH AND THRESHOLD-TEMPERATURE DEPENDENCES OF GAINASP-INP LASERS WITH FREQUENCY SELECTIVE FEEDBACK OPERATING IN THE 1.3-MU-M AND 1.5-MU-M REGIONS
TSANG, WT
OLSSON, NA
LOGAN, RA
APPLIED PHYSICS LETTERS, 1983, 43 (02) : 154 - 156
[47] Multi-electrode laterally-coupled distributed feedback InGaAsP/InP lasers: A prescription for longitudinal mode control
Benhsaien, Abdessamad
Dridi, Kais
Zhang, Jessica
Hall, Trevor J.
PHOTONICS NORTH 2013, 2013, 8915
[48] WAVELENGTH UNIFORMITY OF 1.3-MU-M GAINASP-INP DISTRIBUTED BRAGG REFLECTOR LASERS WITH HYBRID BEAM VAPOR EPITAXIAL-GROWTH
KOCH, TL
CORVINI, PJ
KOREN, U
TSANG, WT
ELECTRONICS LETTERS, 1988, 24 (13) : 822 - 824
[49] ALTERNATING QUARTER-WAVELENGTH LAYERS COATING ON 1. 55 mu m GaInAsP/InP LASER FACETS.
Ohtsu, Motoichi
Kotani, Hiroki
Tagawa, Haruo
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1983, 22 (05): : 815 - 820
[50] Short-term wavelength changes in 1.5-mu m InGaAsP-InP distributed feedback semiconductor lasers
Jeong, J
Song, MK
Jang, DH
Park, KH
IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (08) : 992 - 994

← 1 2 3 4 5 →