共 28 条
- [1] THE ALTERNATING QUARTER-WAVELENGTH LAYERS COATING ON 1.55 MUM GAINASP-INP LASER FACETS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05): : 815 - 820
- [2] GaInAsP/InP OPTICAL SOURCES FOR 1. 2 similar 1. 4 mu m WAVELENGTH REGION. Reports of the Electrical Communication Laboratory, 1979, 27 (7-8): : 569 - 585
- [4] 1. 3 mu m- AND 1. 55 mu m-InGaAsP/InP LASER DIODES. Japan Annual Reviews in Electronics, Computers & Telecommunications, 1982, 1 : 177 - 188
- [8] A 1.59 MU-M WAVELENGTH GAINASP INP DISTRIBUTED FEEDBACK LASER WITH 1ST-ORDER GRATING ON ANTI-MELTBACK LAYER JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06): : L348 - L349
- [9] LONGITUDINAL MODE BEHAVIORS OF 1. 5 mu M RANGE GaInAsP/InP DISTRIBUTED FEEDBACK LASERS. IEEE Journal of Quantum Electronics, 1984, QE-20 (03): : 230 - 235
- [10] 1. 5 mu m DFB LASER DIODES AND InGaAs/InP PHOTODETECTORS. Hitachi Review, 1986, 35 (04): : 207 - 212