首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
ELECTRONIC STRUCTURE STUDIES OF PLASMA-DEPOSITED AMORPHOUS SILICON.
被引:0
|
作者
:
Drevillon, B.
论文数:
0
引用数:
0
h-index:
0
机构:
Ecole Polytechnique, Palaiseau, Fr, Ecole Polytechnique, Palaiseau, Fr
Ecole Polytechnique, Palaiseau, Fr, Ecole Polytechnique, Palaiseau, Fr
Drevillon, B.
[
1
]
Senemaud, C.
论文数:
0
引用数:
0
h-index:
0
机构:
Ecole Polytechnique, Palaiseau, Fr, Ecole Polytechnique, Palaiseau, Fr
Ecole Polytechnique, Palaiseau, Fr, Ecole Polytechnique, Palaiseau, Fr
Senemaud, C.
[
1
]
Cardinaud, C.
论文数:
0
引用数:
0
h-index:
0
机构:
Ecole Polytechnique, Palaiseau, Fr, Ecole Polytechnique, Palaiseau, Fr
Ecole Polytechnique, Palaiseau, Fr, Ecole Polytechnique, Palaiseau, Fr
Cardinaud, C.
[
1
]
Driss Khodja, M.
论文数:
0
引用数:
0
h-index:
0
机构:
Ecole Polytechnique, Palaiseau, Fr, Ecole Polytechnique, Palaiseau, Fr
Ecole Polytechnique, Palaiseau, Fr, Ecole Polytechnique, Palaiseau, Fr
Driss Khodja, M.
[
1
]
Codet, C.
论文数:
0
引用数:
0
h-index:
0
机构:
Ecole Polytechnique, Palaiseau, Fr, Ecole Polytechnique, Palaiseau, Fr
Ecole Polytechnique, Palaiseau, Fr, Ecole Polytechnique, Palaiseau, Fr
Codet, C.
[
1
]
机构
:
[1]
Ecole Polytechnique, Palaiseau, Fr, Ecole Polytechnique, Palaiseau, Fr
来源
:
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties
|
1986年
/ 54卷
/ 05期
关键词
:
The authors are indebted to M. L. Theye for stimulating discussions. They thank G. de Rosny and R. Vanderhaghen for their interest in this work. This work was partly supported by a PIRSEM/CNRS contract;
with financial help from CNRS and AFME;
D O I
:
暂无
中图分类号
:
学科分类号
:
摘要
:
31
引用
收藏
页码:335 / 342
相关论文
共 50 条
[31]
Plasma-deposited hydrogenated amorphous silicon films: multiscale modelling reveals key processes
Marvi, Z.
论文数:
0
引用数:
0
h-index:
0
机构:
Nanyang Technol Univ, NIE, Plasma Sources & Applicat Ctr, Singapore 637616, Singapore
Sahand Univ Technol, Fac Sci, Phys Dept, Tabriz 513351996, Iran
Nanyang Technol Univ, NIE, Plasma Sources & Applicat Ctr, Singapore 637616, Singapore
Marvi, Z.
Xu, S.
论文数:
0
引用数:
0
h-index:
0
机构:
Nanyang Technol Univ, NIE, Plasma Sources & Applicat Ctr, Singapore 637616, Singapore
Nanyang Technol Univ, NIE, Plasma Sources & Applicat Ctr, Singapore 637616, Singapore
Xu, S.
Foroutan, G.
论文数:
0
引用数:
0
h-index:
0
机构:
Sahand Univ Technol, Fac Sci, Phys Dept, Tabriz 513351996, Iran
Nanyang Technol Univ, NIE, Plasma Sources & Applicat Ctr, Singapore 637616, Singapore
Foroutan, G.
Ostrikov, K.
论文数:
0
引用数:
0
h-index:
0
机构:
CSIRO, QUT Joint Sustainable Mat & Devices Lab, POB 218, Lindfield, NSW 2070, Australia
Queensland Univ Technol, Sch Chem Phys & Mech Engn, Brisbane, Qld, Australia
Nanyang Technol Univ, NIE, Plasma Sources & Applicat Ctr, Singapore 637616, Singapore
Ostrikov, K.
Levchenko, I.
论文数:
0
引用数:
0
h-index:
0
机构:
Nanyang Technol Univ, NIE, Plasma Sources & Applicat Ctr, Singapore 637616, Singapore
Queensland Univ Technol, Sch Chem Phys & Mech Engn, Brisbane, Qld, Australia
Nanyang Technol Univ, NIE, Plasma Sources & Applicat Ctr, Singapore 637616, Singapore
Levchenko, I.
RSC ADVANCES,
2017,
7
(31)
: 19189
-
19196
[32]
Donor formation in plasma-deposited amorphous silicon (a-Si:H) by erbium incorporation
Kazanskii, AG
论文数:
0
引用数:
0
h-index:
0
机构:
Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia
Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia
Kazanskii, AG
Mell, H
论文数:
0
引用数:
0
h-index:
0
机构:
Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia
Mell, H
Weiser, G
论文数:
0
引用数:
0
h-index:
0
机构:
Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia
Weiser, G
Terukov, EI
论文数:
0
引用数:
0
h-index:
0
机构:
Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia
Terukov, EI
JOURNAL OF NON-CRYSTALLINE SOLIDS,
2002,
299
: 704
-
708
[33]
Comparison of stress in single and multiple layer depositions of plasma-deposited amorphous silicon dioxide
Au, V
论文数:
0
引用数:
0
h-index:
0
机构:
Australian Natl Univ, Plasma Res Lab, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia
Australian Natl Univ, Plasma Res Lab, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia
Au, V
论文数:
引用数:
h-index:
机构:
Charles, C
Boswell, RW
论文数:
0
引用数:
0
h-index:
0
机构:
Australian Natl Univ, Plasma Res Lab, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia
Australian Natl Univ, Plasma Res Lab, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia
Boswell, RW
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
2006,
39
(01)
: 164
-
171
[34]
STRUCTURAL STUDIES OF HYDROGENATED AMORPHOUS SILICON.
Knights, J.C.
论文数:
0
引用数:
0
h-index:
0
Knights, J.C.
Solar Cells: Their Science, Technology, Applications and Economics,
1980,
2
(04):
: 409
-
419
[35]
Structure of plasma-deposited amorphous hydrogenated boron-carbon thin films
Annen, A
论文数:
0
引用数:
0
h-index:
0
机构:
EURATOM, Max Planck Inst Plasmaphys, D-85748 Garching, Germany
EURATOM, Max Planck Inst Plasmaphys, D-85748 Garching, Germany
Annen, A
Sass, M
论文数:
0
引用数:
0
h-index:
0
机构:
EURATOM, Max Planck Inst Plasmaphys, D-85748 Garching, Germany
EURATOM, Max Planck Inst Plasmaphys, D-85748 Garching, Germany
Sass, M
Beckmann, R
论文数:
0
引用数:
0
h-index:
0
机构:
EURATOM, Max Planck Inst Plasmaphys, D-85748 Garching, Germany
EURATOM, Max Planck Inst Plasmaphys, D-85748 Garching, Germany
Beckmann, R
von Keudell, A
论文数:
0
引用数:
0
h-index:
0
机构:
EURATOM, Max Planck Inst Plasmaphys, D-85748 Garching, Germany
EURATOM, Max Planck Inst Plasmaphys, D-85748 Garching, Germany
von Keudell, A
Jacob, W
论文数:
0
引用数:
0
h-index:
0
机构:
EURATOM, Max Planck Inst Plasmaphys, D-85748 Garching, Germany
EURATOM, Max Planck Inst Plasmaphys, D-85748 Garching, Germany
Jacob, W
THIN SOLID FILMS,
1998,
312
(1-2)
: 147
-
155
[36]
Atomistic analysis of the mechanism of hydrogen diffusion in plasma-deposited amorphous silicon thin films
Valipa, MS
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Massachusetts, Dept Chem Engn, Amherst, MA 01003 USA
Valipa, MS
Maroudas, D
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Massachusetts, Dept Chem Engn, Amherst, MA 01003 USA
Univ Massachusetts, Dept Chem Engn, Amherst, MA 01003 USA
Maroudas, D
APPLIED PHYSICS LETTERS,
2005,
87
(26)
: 1
-
3
[37]
PROPERTIES OF PLASMA-DEPOSITED SILICON-OXIDE
VANDENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
SPERRY UNIVAC,ST PAUL,MN 55165
SPERRY UNIVAC,ST PAUL,MN 55165
VANDENBERG, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(03)
: C118
-
C118
[38]
PROPERTIES OF PLASMA-DEPOSITED SILICON OXYNITRIDE FILMS
TAKASAKI, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN
TAKASAKI, K
KOYAMA, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN
KOYAMA, K
TAKAGI, M
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN
FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN
TAKAGI, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(08)
: C372
-
C372
[39]
PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE
STEIN, HJ
论文数:
0
引用数:
0
h-index:
0
STEIN, HJ
WELLS, VA
论文数:
0
引用数:
0
h-index:
0
WELLS, VA
HAMPY, RE
论文数:
0
引用数:
0
h-index:
0
HAMPY, RE
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(10)
: 1750
-
1754
[40]
CHARACTERIZATION OF PLASMA-DEPOSITED SILICON-NITRIDE
CHOW, R
论文数:
0
引用数:
0
h-index:
0
机构:
NATL SEMICOND CORP,SANTA CLARA,CA 95051
NATL SEMICOND CORP,SANTA CLARA,CA 95051
CHOW, R
LANFORD, WA
论文数:
0
引用数:
0
h-index:
0
机构:
NATL SEMICOND CORP,SANTA CLARA,CA 95051
NATL SEMICOND CORP,SANTA CLARA,CA 95051
LANFORD, WA
KEMING, W
论文数:
0
引用数:
0
h-index:
0
机构:
NATL SEMICOND CORP,SANTA CLARA,CA 95051
NATL SEMICOND CORP,SANTA CLARA,CA 95051
KEMING, W
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(08)
: C372
-
C372
←
1
2
3
4
5
→