Electronic structure of biaxially strained wurtzite crystals GaN, AIN, and InN

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Walter Schottky Institut, Tech. Universität München [1 ]
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MRS Internet J. Nitride Semicond. Res. | / 6d期
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Aluminum nitride - Deformation - Degrees of freedom (mechanics) - Eigenvalues and eigenfunctions - Electronic structure - Epitaxial growth - Gallium nitride - Growth kinetics - Indium compounds - Strain - Stresses;
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