GAN, AIN, AND INN - A REVIEW

被引：2690

作者：

STRITE, S ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.585897

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The status of research on both wurtzite and zinc-blende GaN, A1N, and InN and their alloys is reviewed including exciting recent results. Attention is paid to the crystal growth techniques, structural, optical and electrical properties of GaN, A1N, InN, and their alloys. The various theoretical results for each material are summarized. We also describe the performance of several device structures which have been demonstrated in these materials. Near-term goals and critical areas in need of further research in the III-V nitride material system are identified.

引用

页码：1237 / 1266

页数：30

共 50 条

[1] Molecular beam epitaxy growth of GaN, AIN and InN
Wang, XQ
Yoshikawa, A
[J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2004, 48-9 : 42 - 103
[2] DRY ETCHING OF THIN-FILM INN, AIN AND GAN
PEARTON, SJ
ABERNATHY, CR
REN, F
LOTHIAN, JR
WISK, PW
KATZ, A
CONSTANTINE, C
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (02) : 310 - 312
[3] Calculations of the spontaneous polarizations and dielectric constants for AIN, GaN, InN, and SiC
Davydov, S. Yu.
Lebedev, A. A.
[J]. SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 1203 - 1206
[4] Evaluation of the influence of GaN and AIN as pseudosubstrates on the crystalline quality of InN layers
Lozano, J. G.
Morales, F. M.
Garcia, R.
Lebedev, V.
Cimalla, V.
Ambacher, O.
Gonzalez, D.
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS VOL 4, NO 4, 2007, 4 (04): : 1454 - +
[5] Electronic structure of biaxially strained wurtzite crystals GaN, AIN, and InN
Walter Schottky Institut, Tech. Universität München
[J]. MRS Internet J. Nitride Semicond. Res., (6d):
[6] A simple single-source precursor route to the nanostructures of AIN, GaN and InN
Sardar, K
Dan, M
Schwenzer, B
Rao, CNR
[J]. JOURNAL OF MATERIALS CHEMISTRY, 2005, 15 (22) : 2175 - 2177
[7] HIGH-RATE ELECTRON-CYCLOTRON-RESONANCE ETCHING OF GAN, INN, AND AIN
SHUL, RJ
HOWARD, AJ
PEARTON, SJ
ABEMATHY, CR
VARTULI, CB
BARNES, PA
BOZACK, MJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (05): : 2016 - 2021
[8] Wet etching of GaN, AIN, and SiC: a review
Zhuang, D
Edgar, JH
[J]. MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2005, 48 (01): : 1 - 46
[9] Comparison of GaN, InN and AIN powders for susceptor-based rapid annealing of group III nitride materials
Hong, J
Lee, JW
MacKenzie, JD
Donovan, SM
Abernathy, CR
Pearton, SJ
Zolper, JC
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (10) : 1310 - 1318
[10] Electron accumulation at InN/AlN and InN/GaN interfaces
Veal, TD
Piper, LFJ
Mahboob, I
Lu, H
Schaff, WJ
McConville, CF
[J]. PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07): : 2246 - 2249

← 1 2 3 4 5 →