Electronic structure of threading dislocations in wurtzite GaN

被引：10

作者：

Belabbas, I. ^{[1
]}

Chen, J. ^{[2
]}

Nouet, G. ^{[3
]}

机构：

[1] Univ Bejaia, Fac Sci Exactes, Lab Physicochim Mat & Catalyse, Grp Cristallog & Simulat Mat, Bejaia 06000, Algeria

[2] Univ Caen Basse Normandie, CNRS CEA ENSICAEN, UMR6252, CIMAP Alencon, F-14032 Caen, France

[3] CIMAP, F-14050 Caen, France

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 8 | 2015年 / 12卷 / 08期

关键词：

GaN; gallium nitride; threading dislocations; electronic structure; DFT; 60-DEGREES BASAL DISLOCATION; NITRIDE SEMICONDUCTORS; SCREW DISLOCATIONS; MICROSCOPY;

D O I：

10.1002/pssc.201400215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have carried out atomistic simulations, based on density functional theory, to investigate the atomic and electronic structures of the three types of prismatic threading dislocations in hexagonal gallium nitride. Screw and mixed threading dislocations were demonstrated to introduce both deep and shallow gap states, while most of core configurations of the edge dislocation introduce solely shallow states. The higher electrical activity of both screw and mixed dislocations, compared to the edge one, is correlated with the high dispersion of their energy levels, within the GaN bandgap. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1123 / 1128

页数：6

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