Reliable two-dimensional carrier profiling by scanning spreading resistance microscopy on InP-based devices with fast quantification procedure

被引：0

作者：

Xu, Ming Wei ^{[1
]}

Eyben, Pierre ^{[1
]}

Hantschel, Thomas ^{[3
]}

Vandervorst, Wilfried ^{[2
]}

机构：

[1] IMEC, Kapeldreef 75, B3001 Leuven, Belgium

[2] KU Leuven, INSYS, Kard. Mercierlaan 92, B3001 Leuven, Belgium

[3] Palo Alto Research Center, Xerox Corporation, 3333 Coyote Hill Road, Palo Alto, CA 94304, United States

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 2 B期

关键词：

Atomic force microscopy - Charge carriers - Diffusion - Oxidation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Scanning spreading resistance microscopy (SSRM) proves to be a promising two-dimensional (2-D) carrier profiling tool, particularly for complicated structures. However, its application to InP-based devices has limited quantitative possibility due to the lack of reliable measuring results. This study reveals that this limitation is related to a tip-induced (field-enhanced) oxidation procedure, which is explained by a P-diffusion-limited model. A practical solution for realizing reliable measurement is developed for the first time with excellent results. Furthermore, a fast quantification procedure based on careful constructed calibration is completed.

引用

页码：1048 / 1054

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