Reliable two-dimensional carrier profiling by scanning spreading resistance microscopy on InP-based devices with fast quantification procedure

Scanning spreading resistance microscopy (SSRM) proves to be a promising two-dimensional (2-D) carrier profiling tool, particularly for complicated structures. However, its application to InP-based devices has limited quantitative possibility due to the lack of reliable measuring results. This study reveals that this limitation is related to a tip-induced (field-enhanced) oxidation procedure, which is explained by a P-diffusion-limited model. A practical solution for realizing reliable measurement is developed for the first time with excellent results. Furthermore, a fast quantification procedure based on careful constructed calibration is completed.