共 50 条
- [1] RECRYSTALLIZATION CHARACTERISTICS OF POLYCRYSTALLINE SILICON FILMS AMORPHIZED BY GERMANIUM ION-IMPLANTATIONSOLID-STATE ELECTRONICS, 1995, 38 (02) : 383 - 387KANG, MKAKASHI, KMATSUI, TKUWANO, H
- [2] Phosphorus and boron doping effects on solid phase recrystallization of polycrystalline silicon films amorphized by germanium ion implantationJOURNAL OF MATERIALS SCIENCE LETTERS, 1996, 15 (04) : 343 - 344Kang, MYYamamoto, TMatsui, TKuwano, H
- [4] Phosphorous and boron doping effects on solid phase recrystallization of polycrystalline silicon films amorphized by germanium ion implantation (vol 15, pg 343, 1996)JOURNAL OF MATERIALS SCIENCE LETTERS, 1996, 15 (19) : 1740 - 1740Kang, MKYamamoto, TMatsui, TKuwano, H
- [5] RECRYSTALLIZATION OF SILICON AMORPHIZED BY CARBON IMPLANTATIONAPPLIED PHYSICS LETTERS, 1991, 58 (13) : 1434 - 1436CHEVACHAROENKUL, SILZHOEFER, JRFEIJOO, DGOSELE, U
- [6] Recrystallization behaviour and electrical properties of germanium ion implanted polycrystalline silicon filmsJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1996, 7 (06) : 451 - 454Kang, MKMatsui, TKuwano, H
- [7] SOLID-PHASE EPITAXIAL GROWTH OF POLYCRYSTALLINE SILICON FILMS AMORPHIZED BY ION IMPLANTATION.1600, (02):Quach, N.T.Reif, R.
- [8] DOSE DEPENDENCE OF RECRYSTALLIZATION BEHAVIOR IN GERMANIUM-ION-IMPLANTED POLYCRYSTALLINE SILICON FILMSJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (7A): : L803 - L805KANG, MKMATSUI, TKUWANO, H
- [9] SOLID-PHASE EPITAXIAL-GROWTH OF POLYCRYSTALLINE SILICON FILMS AMORPHIZED BY ION-IMPLANTATIONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) : C195 - C195QUACH, NTREIF, RTSAUR, BY
- [10] RECRYSTALLIZATION OF SI AMORPHIZED BY CU AND AU ION-IMPLANTATIONSURFACE & COATINGS TECHNOLOGY, 1994, 66 (1-3): : 408 - 410TAKAHIRO, KMATSUI, TNAGATA, SYAMAGUCHI, S