NEW LOW-NOISE ALGAAS/GAAS 2DEG FET WITH A SURFACE UNDOPED LAYER.

被引：0
|
作者：
Hida, Hikaru [1 ]
Ohata, Keiichi [1 ]
Suzuki, Yasuyuki [1 ]
Toyoshima, Hideo [1 ]
机构：
[1] NEC, Kawasaki, Jpn, NEC, Kawasaki, Jpn
来源：
IEEE Transactions on Electron Devices | 1986年 / ED-33卷 / 05期
关键词：
2-D ELECTRON GAS FET - LOW NOISE - SELECTIVE DOPING;
D O I：
10.1109/t-ed.1986.22539
中图分类号：
学科分类号：
摘要：
引用
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页码：601 / 607
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