A LOW-NOISE 1.2—1.8 GHz COOLED GaAs FET AMPLIFIER

被引：0
|
作者：
曹逸庭 [1 ]
机构：
[1] Purple Mountain Observatory Academia Sinica
来源：
Journal of Electronics(China) | 1988年 / 02期
关键词：
Amplifier; Low noise amplifier; GaAs FET amplifier; Noise measurement;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A low-noise 1.2—1.8 GHz cooled GaAs FET amplifier with mixer bias circuit isreported.The amplifier noise temperature obtained at an ambient temperature of 20 K in thefrequency range of 1.2—1.7 GHz is 10K.The lowest noise temperature is 4K.The gain is about 30 dB.An automatic measuring instrument for noise temperature was designed.The noise effect of the inputcable and the error analysis of the total measurement were made.The total measurement error is 2K.
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页码：154 / 159
页数：6
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