A LOW-NOISE 1.2—1.8 GHz COOLED GaAs FET AMPLIFIER

被引：0
|
作者：
曹逸庭 [1 ]
机构：
[1] Purple Mountain Observatory Academia Sinica
来源：
Journal of Electronics(China) | 1988年 / 02期
关键词：
Amplifier; Low noise amplifier; GaAs FET amplifier; Noise measurement;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A low-noise 1.2—1.8 GHz cooled GaAs FET amplifier with mixer bias circuit isreported.The amplifier noise temperature obtained at an ambient temperature of 20 K in thefrequency range of 1.2—1.7 GHz is 10K.The lowest noise temperature is 4K.The gain is about 30 dB.An automatic measuring instrument for noise temperature was designed.The noise effect of the inputcable and the error analysis of the total measurement were made.The total measurement error is 2K.
引用
收藏
页码：154 / 159
页数：6
相关论文
共 50 条
  • [21] A VERY LOW-NOISE FET INPUT AMPLIFIER
    JEFFERTS, SR
    WALLS, FL
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1989, 60 (06): : 1194 - 1196
  • [22] A LOW-NOISE AMPLIFIER WITH AN FET COMPRESSION CIRCUIT
    CAMPBELL, DL
    [J]. JOURNAL OF THE AUDIO ENGINEERING SOCIETY, 1968, 16 (03): : 340 - &
  • [23] Low-Noise Amplifier at 2.45 GHz
    Gawande, Rohit
    Bradley, Richard
    [J]. IEEE MICROWAVE MAGAZINE, 2010, 11 (01) : 122 - 126
  • [24] A 5GHz/1.8V Low Power CMOS Low-Noise Amplifier
    Azevedo, Fernando
    Mendes, Luis
    Fialho, Vitor
    Vaz, Joao C.
    Fortes, Fernando
    Rosario, Maria J.
    [J]. APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5, 2008, : 2006 - +
  • [25] Noise modeling and characterization for 1.5-V 1.8-GHz SOI low-noise amplifier
    Jin, W
    Liu, WD
    Hai, CH
    Chan, PCH
    Hu, CM
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (04) : 803 - 809
  • [26] CRYOGENICALLY COOLED GAAS FET AMPLIFIER WITH A NOISE TEMPERATURE UNDER 70K AT 5.0 GHZ
    PIERRO, J
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (12) : 972 - 975
  • [27] NJ3600L FET AS A VERY LOW-NOISE, COOLED AMPLIFIER FOR INFRARED BOLOMETRY
    LANZI, L
    SASSOLI, K
    VENTURA, G
    [J]. CRYOGENICS, 1994, 34 (11) : 959 - 960
  • [28] A 1.8 GHz to 43 GHz Low Noise Amplifier with 4 dB noise figure in 0.1 μm GaAs Technology
    Sakalas, Mantas
    Sakalas, Paulius
    [J]. 2022 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS, 2022, : 140 - 143
  • [29] A 600 GHz Low-Noise Amplifier Module
    Tessmann, A.
    Leuther, A.
    MassIer, H.
    Hurm, V.
    Kuri, M.
    Zink, M.
    Riessle, M.
    Stuiz, H. P.
    Schlechtweg, M.
    Ambacher, O.
    [J]. 2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2014,
  • [30] A GAAS MONOLITHIC LOW-NOISE WIDEBAND AMPLIFIER
    NISHIUMA, M
    NAMBU, S
    HAGIO, M
    KANO, G
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 425 - 430
12345