Production of Metastable Defects in n-Type Silicon by Hydrogen Implantation at 88 K

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[1] Tokuda, Yutaka
[2] Sugiyama, Takahide
[3] Kanazawa, Shigeki
[4] Iwata, Hiroyuki
[5] Ishiko, Masayasu
来源：
Tokuda, Y. | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词：
Cooling - Crystal defects - Deep level transient spectroscopy - Electric potential - Electron energy levels - Hydrogen - Ion implantation - Schottky barrier diodes - Thermal effects;
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摘要：
We report on the first observation of metastable defects in n-type silicon implanted with 90 keV hydrogen ions at 88 K at a dose of 2 × 10 10 cm-2. Schottky contacts were fabricated on the implanted surfaces to study room-temperature stable defects by deep-level transient spectroscopy. After reverse-bias cooling, three new peaks (E c-0.29, 0.41, 0.55 eV) appear in addition to well-known defects. Metastable defects are hydrogen-related and their production rates are higher in the 88 K implantation than in the room-temperature implantation.
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