Void-effect modeling of flip-chip encapsulation on ceramic substrate

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Microelectronics Division, IBM Corporation, Endicott NY 13760, United States [1 ]
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Ceramic materials - Computer simulation - Encapsulation - Finite element method - Integrated circuit manufacture - Mathematical models - Soldering - Strain - Stress analysis - Substrates - Thermal cycling - Thermoanalysis;
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A detailed numerical and experimental study of the thermal-mechanical stress and strain in the solder bumps (C4s) of a flip-chip ceramic chip carrier has been completed. The numerical model used was based upon the finite element method. The model simulated accelerated thermal cycling (ATC) from 0 °C to 100 °C. Several parametric studies were conducted, including the effects of chip size, micro-encapsulation, and the effect of the presence of voids in the micro-encapsulant. It was notably found that the presence of voids in the encapsulant does not significantly increase the stress/strain in the C4s, with the exception of very large voids and voids at or near the edge of the chip.
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