High electric field hole mobility in a-Si:H

被引:0
|
作者
Juska, G. [1 ]
Arlauskas, K. [1 ]
Equer, B. [1 ]
Vanderhaghen, R. [1 ]
机构
[1] Vilnius Univ, Vilnius, Lithuania
来源
Journal of Non-Crystalline Solids | / 227-230卷 / Pt A期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:176 / 179
相关论文
共 50 条
  • [41] Hole drift mobility in μc-Si:H
    Juska, G
    Viliunas, M
    Arlauskas, K
    Nekrasas, N
    Wyrsch, N
    Feitknecht, L
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (09) : 4971 - 4974
  • [42] EFFECT OF ELECTRON-HOLE SCATTERING ON MOBILITY IN INDIUM ANTIMONIDE AT HIGH ELECTRIC FIELD
    MORISAKI, H
    INUISHI, Y
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (07) : 1261 - &
  • [43] Improvement of the field effect mobility of a-Si: H TFTs using the method of phosphorus doping in active layer
    Lee, Sang-Kwon
    Son, Won-Ho
    Moon, Young-Soon
    Choi, Sie-Young
    2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS, 2012, : 103 - 106
  • [44] High performance A-Si:H(:Cl) TFT
    Kim, SK
    Lee, KS
    Choi, JH
    Kim, CS
    Jang, J
    PROCEEDINGS OF THE THIRD SYMPOSIUM ON THIN FILM TRANSISTOR TECHNOLOGIES, 1997, 96 (23): : 138 - 145
  • [45] Probe of field collapse in a-Si:H solar cells
    Wang, Q
    Crandall, RS
    AMORPHOUS SILICON TECHNOLOGY - 1996, 1996, 420 : 215 - 220
  • [46] Defects in a-Si and a-Si:H:: A numerical study
    Knief, S
    von Niessen, W
    Koslowski, T
    PHYSICAL REVIEW B, 1998, 58 (08): : 4459 - 4472
  • [47] Characteristics of field effect a-Si:H solar cells
    Univ of Tokyo, Tokyo, Japan
    Journal of Non-Crystalline Solids, 227-230 (Pt 2): : 1287 - 1290
  • [48] Characteristics of field effect a-Si:H solar cells
    Fujioka, H
    Oshima, M
    Hu, C
    Sumiya, M
    Matsuki, N
    Miyazaki, K
    Koinuma, H
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 1287 - 1290
  • [49] Effect of front hole channel on leakage characteristics of a-Si:H TFTs
    Servati, P
    Nathan, A
    Sazonov, A
    ICM 2000: PROCEEDINGS OF THE 12TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, 2000, : 247 - 250
  • [50] Proton NMR hole-burning in hot wire a-Si:H
    Herberg, J
    Fedders, PA
    Leopold, DJ
    Norberg, RE
    Schropp, REI
    AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002, 2002, 715 : 393 - 398