Characteristics of field effect a-Si:H solar cells

Two dimensional device simulation has revealed advantages of a solar cell which utilizes an inversion layer induced by the field effect instead of a heavily doped window layer. The cell performance improvements have been predicted not only in the short circuit current due to the increased quantum efficiency for light with short wavelengths but also in the open circuit voltage and the fill factor by the use of metals with larger workfunctions. The conversion efficiency has been estimated to increase to 50% by the use of the field effect solar cell. (C) 1998 Elsevier Science B.V. All rights reserved.