Characteristics of field effect a-Si:H solar cells

被引：9

作者：

Fujioka, H ^{[1
]}

Oshima, M

Hu, C

Sumiya, M

Matsuki, N

Miyazaki, K

Koinuma, H

机构：

[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 113, Japan

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[3] Shizuoka Univ, Dept Elect Engn, Hamamatsu, Shizuoka 432, Japan

[4] Tokyo Inst Technol, Ceram Mat & Struct Lab, Yokohama, Kanagawa 4259, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

aSi : H; field effect; solar cell;

D O I：

10.1016/S0022-3093(98)00353-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Two dimensional device simulation has revealed advantages of a solar cell which utilizes an inversion layer induced by the field effect instead of a heavily doped window layer. The cell performance improvements have been predicted not only in the short circuit current due to the increased quantum efficiency for light with short wavelengths but also in the open circuit voltage and the fill factor by the use of metals with larger workfunctions. The conversion efficiency has been estimated to increase to 50% by the use of the field effect solar cell. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

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页码：1287 / 1290

页数：4

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