Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices

被引：0
|
作者：
Universite de Rennes I, Rennes, France [1 ]
机构：
来源：
Thin Solid Films | / 1-2卷 / 1-7期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices
    Hbib, H
    Bonnaud, O
    Gauneau, M
    Hamedi, L
    Marchand, R
    Quemerais, A
    THIN SOLID FILMS, 1997, 310 (1-2) : 1 - 7
  • [2] CHEMICAL VAPOR-DEPOSITION AND CHARACTERIZATION OF PHOSPHORUS-NITRIDE (P3N5) GATE INSULATORS FOR INP METAL-INSULATOR-SEMICONDUCTOR DEVICES
    HIROTA, Y
    KOBAYASHI, T
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5037 - 5043
  • [3] INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS UTILIZING AN AMORPHOUS PHOSPHORUS GATE INSULATOR
    SERREZE, HB
    SCHACHTER, R
    OLEGO, DJ
    VISCOGLIOSI, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (04) : 931 - 932
  • [4] InP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS UTILIZING AN AMORPHOUS PHOSPHORUS GATE INSULATOR.
    Serreze, H.B.
    Schachter, R.
    Olego, D.J.
    Viscogliosi, M.
    IEEE Transactions on Electron Devices, 1987, ED-34 (04) : 931 - 932
  • [5] EFFECTS OF SULFIDE TREATMENT ON INP METAL-INSULATOR-SEMICONDUCTOR DEVICES WITH PHOTOCHEMICAL VAPOR DEPOSIT P3N5 GATE INSULATORS
    JEONG, YH
    LEE, BH
    JO, SK
    JEONG, MY
    SUGANO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B): : L1329 - L1331
  • [6] Effects of sulfide treatment on InP metal-insulator-semiconductor devices with photochemical vapor deposit P3N5 gate insulators
    Jeong, Yoon-Ha, 1600, JJAP, Minato-ku, Japan (34):
  • [7] ELECTRONIC-PROPERTIES OF METAL-INSULATOR-SEMICONDUCTOR DEVICES PREPARED ON THERMALLY TREATED INP IN PHOSPHORUS OVERPRESSURE
    CHOUJAA, A
    CHAVE, J
    BLANCHET, R
    VIKTOROVITCH, P
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (06) : 2191 - 2193
  • [8] Electrical characterization of PMMA:TiO2 gate dielectric for metal-insulator-semiconductor devices
    Ismail, L. N.
    Sauqi, M. N. A.
    Habibah, Z.
    Herman, S. H.
    Asiah, M. N.
    Rusop, M.
    2013 IEEE STUDENT CONFERENCE ON RESEARCH AND DEVELOPMENT (SCORED 2013), 2013, : 407 - 410
  • [9] ELECTROLUMINESCENT METAL-INSULATOR-SEMICONDUCTOR DEVICES
    BALLANTYNE, JM
    CLARK, MD
    BAIDYAROY, S
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (04): : 556 - 556
  • [10] THE INFLUENCE OF DIFFERENT INSULATORS ON PALADIUM-GATE METAL-INSULATOR-SEMICONDUCTOR HYDROGEN SENSORS
    DOBOS, K
    ARMGARTH, M
    ZIMMER, G
    LUNDSTROM, I
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) : 508 - 510
12345