INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS UTILIZING AN AMORPHOUS PHOSPHORUS GATE INSULATOR

被引：1
|
作者：
SERREZE, HB
SCHACHTER, R
OLEGO, DJ
VISCOGLIOSI, M
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 04期
关键词：
D O I：
10.1109/T-ED.1987.23018
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：931 / 932
页数：2
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