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- [1] EFFECTS OF SULFIDE TREATMENT ON INP METAL-INSULATOR-SEMICONDUCTOR DEVICES WITH PHOTOCHEMICAL VAPOR DEPOSIT P3N5 GATE INSULATORS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B): : L1329 - L1331
- [4] Characterization of phosphorus oxinitride (PON) gate insulators for InP metal-insulator-semiconductor devices Thin Solid Films, 1-2 (1-7):
- [5] Effects of sulfide treatment on the gate voltage swing of InP MISFETs with photo-CVD grown P3N5 gate insulator COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 775 - 778
- [8] EFFECTS OF SULFIDE PASSIVATION ON THE PERFORMANCE OF GAAS MISFETS WITH PHOTO-CVD GROWN P3N5 GATE INSULATORS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (2B): : 1176 - 1180
- [9] Threshold voltages of AlGaN/GaN metal-insulator-semiconductor devices with AlN or Al2O3 gate insulators 2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,