Effects of sulfide treatment on InP metal-insulator-semiconductor devices with photochemical vapor deposit P3N5 gate insulators

被引:0
|
作者
机构
[1] Jeong, Yoon-Ha
[2] Lee, Bong-Hoon
[3] Jo, Seong-Kue
[4] Jeong, Moon-Young
[5] Sugano, Takuo
来源
Jeong, Yoon-Ha | 1600年 / JJAP, Minato-ku, Japan卷 / 34期
关键词
17;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 36 条
  • [31] STRUCTURE AND COMPOSITION OF INTERFACIAL SILICON-OXIDE LAYER IN CHEMICAL-VAPOR-DEPOSITED Y2O3-SIO2 BILAYER DIELECTRICS FOR METAL-INSULATOR-SEMICONDUCTOR DEVICES
    SHARMA, RN
    RASTOGI, AC
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (07) : 4215 - 4224
  • [32] Enhanced performance of gate-first p-channel metal-insulator-semiconductor field-effect transistors with polycrystalline silicon/TiN/HfSiON stacks fabricated by physical vapor deposition based in situ method
    Kitano, Naomu
    Horie, Shinya
    Arimura, Hiroaki
    Kawahara, Takaaki
    Sakashita, Shinsuke
    Nishida, Yukio
    Yugami, Jiro
    Minami, Takashi
    Kosuda, Motomu
    Hosoi, Takuji
    Shimura, Takayoshi
    Watanabe, Heiji
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (45-49): : L1111 - L1113
  • [33] Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal-insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film
    Gullu, H. H.
    Yildiz, D. E.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (11) : 8705 - 8717
  • [34] AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors with high on/off current ratio of over 5 x 1010 achieved by ozone pretreatment and using ozone oxidant for Al2O3 gate insulator
    Tokuda, Hirokuni
    Asubar, Joel T.
    Kuzuhara, Masaaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (12)
  • [35] Normally-off fully recess-gated GaN metal-insulator-semiconductor field-effect transistor using Al2O3/Si3N4 bilayer as gate dielectrics
    Wang, Hongyue
    Wang, Jinyan
    Liu, Jingqian
    Li, Mengjun
    He, Yandong
    Wang, Maojun
    Yu, Min
    Wu, Wengang
    Zhou, Yang
    Dai, Gang
    APPLIED PHYSICS EXPRESS, 2017, 10 (10)
  • [36] Improvement of Device Characteristics for TiN Gate p-Type Metal-Insulator-Semiconductor Field-Effect Transistor with Al2O3-Capped HfO2 Dielectrics by Controlling Al2O3 Diffusion Annealing Process
    Morooka, Tetsu
    Matsuki, Takeo
    Mise, Nobuyuki
    Kamiyama, Satoshi
    Nabatame, Toshihide
    Eimori, Takahisa
    Nara, Yasuo
    Ohji, Yuzuru
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)