Defect characterization in 3C-SiC films grown on thin and thick silicon top layers of SIMOX

被引:0
|
作者
Hong, M.H. [1 ]
Chung, J. [1 ]
Namavar, F. [2 ]
Pirouz, P. [1 ]
机构
[1] Dept. of Mat. Sci. and Engineering, Case Western Reserve University, 10900 Euclid Ave., Cleveland, OH 44106-7204, United States
[2] Optoelectronic Division, Spire Corporation, One Patriots Park, Bedford, MA 01730, United States
关键词
D O I
暂无
中图分类号
学科分类号
摘要
8
引用
收藏
相关论文
共 50 条
  • [31] A study of thick 3C-SiC epitaxial layers grown on 6H-SIC substrates by sublimation epitaxy in vacuum
    Lebedev, A. A.
    Zelenin, V. V.
    Abramov, P. L.
    Bogdanova, E. V.
    Lebedev, S. P.
    Nel'son, D. K.
    Razbirin, B. S.
    Shcheglov, M. P.
    Tregubova, A. S.
    Suvajarvi, M.
    Yakimova, R.
    SEMICONDUCTORS, 2007, 41 (03) : 263 - 265
  • [32] Electrical characterisation of epitaxially grown 3C-SiC films
    Jiang, Liudi
    Zhong, Le
    Reed, Fred
    Taysir, Salim
    Bosi, Matteo
    Attolini, Giovanni
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 617 - +
  • [33] Properties of heteroepitaxial 3C-SiC films grown by LPCVD
    Yamaguchi, YI
    Nagasawa, H
    Shoki, T
    Annaka, N
    Mitsui, H
    SENSORS AND ACTUATORS A-PHYSICAL, 1996, 54 (1-3) : 695 - 699
  • [34] Crystallinity of 3C-SiC films grown on Si substrates
    Yagi, K.
    Nagasawa, H.
    Materials Science Forum, 1998, 264-268 (pt 1): : 191 - 194
  • [35] Stresses in 3C-SiC films grown on Si substrates
    Jacob, Chacko
    Pirouz, Pirouz
    IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, 1999, : 275 - 278
  • [36] Crystallinity of 3C-SiC films grown on Si substrates
    Yagi, K
    Nagasawa, H
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 191 - 194
  • [37] 5μm thick 3C-SiC layers grown on Ge-modified Si(100) substrates
    Zgheib, Ch.
    Nassar, E.
    Hamad, M.
    Nader, R.
    Masri, P.
    Pezoldt, J.
    Ferro, G.
    SUPERLATTICES AND MICROSTRUCTURES, 2006, 40 (4-6) : 638 - 643
  • [38] Investigation of 3C-SiC epitaxial layers grown by sublimation epitaxy
    Davydov, DV
    Lebedev, AA
    Tregubova, AS
    Kozlovski, VV
    Kuznetsov, AN
    Bogdanova, EV
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 221 - 224
  • [39] Electrical properties of 3C-SiC layers grown on silicon substrates with a novel stress relaxation structure
    Irokawa, Y
    Kodama, M
    Kachi, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (12) : G680 - G682
  • [40] Chemical-vapor-deposition growth and characterization of epitaxial 3C–SiC films on SOI substrates with thin silicon top layers
    C. K. Moon
    H. J. Song
    J. K. Kim
    J. H. Park
    S. J. Jang
    J.-B. Yoo
    H.-R. Park
    Byung-Teak Lee
    Journal of Materials Research, 2001, 16 : 24 - 27