DEPENDENCE OF WARPAGE OF CZOCHRALSKI-GROWN SILICON WAFERS ON OXYGEN CONCENTRATION AND ITS APPLICATION TO MOS IMAGE-SENSOR DEVICE.

被引:0
|
作者
Shimizu, Hirofumi [1 ]
Fujita, Masato [1 ]
Aoshima, Takaaki [1 ]
Sugino, Yuji [1 ]
机构
[1] Hitachi Ltd, Kofu Branch, Jpn, Hitachi Ltd, Kofu Branch, Jpn
关键词
D O I
暂无
中图分类号
学科分类号
摘要
54
引用
收藏
页码:68 / 74
相关论文
共 34 条
  • [1] DEPENDENCE OF WARPAGE OF CZOCHRALSKI-GROWN SILICON-WAFERS ON OXYGEN CONCENTRATION AND ITS APPLICATION TO MOS IMAGE-SENSOR DEVICE
    SHIMIZU, H
    FUJITA, M
    AOSHIMA, T
    SUGINO, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1986, 25 (01): : 68 - 74
  • [2] WARPAGE OF CZOCHRALSKI-GROWN SILICON-WAFERS AS AFFECTED BY OXYGEN PRECIPITATION
    SHIMIZU, H
    WATANABE, T
    KAKUI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (07): : 815 - 821
  • [3] WARPAGE OF CZOCHRALSKI-GROWN SILICON WAFERS AS AFFECTED BY OXYGEN PRECIPITATION.
    Shimizu, Hirofumi
    Watanabe, Tetsuo
    Kakui, Yoshiharu
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1985, 24 (07): : 815 - 821
  • [4] Thermal warpage of large diameter Czochralski-grown silicon wafers
    Shimizu, Hirofumi
    Aoshima, Takaaki
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (12): : 2315 - 2323
  • [5] THERMAL WARPAGE OF LARGE DIAMETER CZOCHRALSKI-GROWN SILICON-WAFERS
    SHIMIZU, H
    AOSHIMA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (12): : 2315 - 2323
  • [7] PROPERTIES OF SILICON WAFERS IN DEPENDENCE OF ITS POSITION IN A CZOCHRALSKI-GROWN SINGLE-CRYSTAL
    KAUS, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : C90 - &
  • [8] The Marangoni convection and the oxygen concentration in Czochralski-grown silicon
    Xu, YS
    Liu, CC
    Wang, HY
    Hao, QY
    JOURNAL OF CRYSTAL GROWTH, 2003, 254 (3-4) : 298 - 304
  • [10] Oxygen precipitation in Czochralski-grown silicon wafers during hydrogen annealing
    Izunome, K
    Shirai, H
    Kashima, K
    Yoshikawa, J
    Hojo, A
    APPLIED PHYSICS LETTERS, 1996, 68 (01) : 49 - 50