共 34 条
- [1] DEPENDENCE OF WARPAGE OF CZOCHRALSKI-GROWN SILICON-WAFERS ON OXYGEN CONCENTRATION AND ITS APPLICATION TO MOS IMAGE-SENSOR DEVICE JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1986, 25 (01): : 68 - 74
- [2] WARPAGE OF CZOCHRALSKI-GROWN SILICON-WAFERS AS AFFECTED BY OXYGEN PRECIPITATION JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (07): : 815 - 821
- [3] WARPAGE OF CZOCHRALSKI-GROWN SILICON WAFERS AS AFFECTED BY OXYGEN PRECIPITATION. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1985, 24 (07): : 815 - 821
- [4] Thermal warpage of large diameter Czochralski-grown silicon wafers Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (12): : 2315 - 2323
- [5] THERMAL WARPAGE OF LARGE DIAMETER CZOCHRALSKI-GROWN SILICON-WAFERS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (12): : 2315 - 2323
- [9] Oxidation-induced stacking faults dependent on oxygen concentration in Czochralski-grown silicon wafers Shimizu, Hirofumi, 1600, (32):