Experimental apparatus for growth of SiC thin film using CO2 laser radiation

被引：0
|
作者：
Honda, Hikaru
Abe, Toshimi
机构：
来源：
Tohoku Kogyo Daigaku Kiyo, 1: Rikogakuhen | 1989年 / 09期
关键词：
Lasers; Carbon Dioxide - Semiconducting Films--Laser Applications - Semiconducting Silicon Compounds--Growth;
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摘要：
A vacuum chamber was made with 304 stainless steel. The experimental apparatus consists of a substrate heating oven with a holder, an electrical feed-through, an ionization gauge, an infrared window and a specimen source holder. Temperature of the holder can be increased up to 1200°C by heating the oven in a vacuum of the order of 10-8 Torr. When the growth of SiC films by the laser radiation is carried out on heated Si substrate (1000-1200°C), this oven can be used as the substrate heating tool.
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页码：145 / 149
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