Analysis of hole transport in cubic phase of p-type GaN by relaxation time approximation

被引:0
|
作者
Hayashi, Yasuhiko [1 ]
Soga, Tetsuo [2 ]
Umeno, Masayoshi [1 ,2 ]
Jimbo, Takashi [2 ]
机构
[1] Dept. of Elec. and Comp. Engineering, Nagoya Inst. Technol., G., Nagoya, Japan
[2] Dept. Environ. Technol. Urban Plan., Nagoya Inst. Technol., G., Nagoya, Japan
来源
Physica B: Condensed Matter | 1999年 / 272卷 / 01期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:256 / 259
相关论文
共 50 条
  • [41] P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE
    Usikov, A
    Kovalenkov, O
    Ivantsov, V
    Sukhoveev, V
    Dmitriev, V
    Shmidt, N
    Poloskin, D
    Petrov, V
    Ratnikov, V
    GAN, AIN, INN AND THEIR ALLOYS, 2005, 831 : 453 - 457
  • [42] EFFECTS OF ELECTRON-HOLE SCATTERING ON TRANSIENT TRANSPORT IN P-TYPE SILICON
    DEWEY, J
    OSMAN, MA
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 482 - 484
  • [43] Effects of electron-hole scattering on transient transport in p-type silicon
    Osman, Mohamed A.
    Dewey, Jim
    Semiconductor Science and Technology, 1994, 9 (5 SUPPL) : 482 - 484
  • [44] High p-type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant
    Brandt, O
    Yang, H
    Kostial, H
    Ploog, KH
    APPLIED PHYSICS LETTERS, 1996, 69 (18) : 2707 - 2709
  • [45] Hot hole relaxation dynamics in p-GaN
    Ye, H
    Wicks, GW
    Fauchet, PM
    APPLIED PHYSICS LETTERS, 2000, 77 (08) : 1185 - 1187
  • [46] Analysis on the enhanced hole concentration in p-type GaN grown by indium-surfactant-assisted Mg delta doping
    Chen, Yingda
    Wu, Hualong
    Yue, Guanglong
    Chen, Zimin
    Zheng, Zhiyuan
    Wu, Zhisheng
    Wang, Gang
    Jiang, Hao
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (05): : 1109 - 1115
  • [47] Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier
    Ji, Yun
    Zhang, Zi-Hui
    Tan, Swee Tiam
    Ju, Zhen Gang
    Kyaw, Zabu
    Hasanov, Namig
    Liu, Wei
    Sun, Xiao Wei
    Demir, Hilmi Volkan
    OPTICS LETTERS, 2013, 38 (02) : 202 - 204
  • [48] Evidence of Two-Dimensional Hole Gas in p-Type AlGaN/AlN/GaN Heterostructures
    Wei, Qiyuan
    Wu, Zhihao
    Sun, Kewei
    Ponce, Fernando A.
    Hertkorn, Joaquim
    Scholz, Ferdinand
    APPLIED PHYSICS EXPRESS, 2009, 2 (12)
  • [49] Thermodynamic analysis of Mg-doped p-type GaN semiconductor
    Li, Jing-Bo
    Liang, JingKui
    Rao, GuangHui
    Zhang, Yi
    Liu, GuangYao
    Chen, JingRan
    Liu, QuanLin
    Zhang, WeiJing
    JOURNAL OF ALLOYS AND COMPOUNDS, 2006, 422 (1-2) : 279 - 282
  • [50] Plasmonic Hot Hole-Driven Water Splitting on Au Nanoprisms/P-Type GaN
    Song, Kyoungjae
    Lee, Hyunhwa
    Lee, Moonsang
    Park, Jeong Young
    ACS ENERGY LETTERS, 2021, 6 (04) : 1333 - 1339