Erratum: 'isolation of a lattice-mismatched AllnAs/GaInAs layer of InP using ion implantation for high energy mobility transistor realization' [J. Vac. Sci. Technol. B 15, 1008 (1997)]

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[1] Isolation of a lattice-mismatched AlInAs/GaInAs layer on InP using ion implantation for high energy mobility transistor realization (vol 15, pg 1008, 1997)
Fourre, H
Pesant, JC
Schuler, O
Cappy, A
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (01): : 255 - 255
[2] Isolation of a lattice-mismatched AlInAs/GaInAs layer on InP using ion implantation for high energy mobility transistor realization
Fourre, H
Pesant, JC
Schuler, O
Cappy, A
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04): : 1008 - 1010
[3] Erratum: `early nitriding stage of evaporated-Ti thin films by N-ion implantation' [J. Vac. Sci. Technol. A 15, 1848 (1997)]
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[5] Erratum: 'anisotropy in the lateral momentum of CO chemisorbed on Cu(110) studied by time-of-flight electron simulated desorption ion angular distribution' [J. Vac. Sci. Technol. A 15, 1548 (1997)]
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Mocuta, Dan
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[6] Erratum: selective wet etching of lattice-matched InGaAs/InAlAs on InP and metamorphic InGaAs/InAlAs on GaAs using succinic acid/hydrogen peroxide solution [J. Vac. Sci. Technol. B 14, 3400 (1996)]
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