Formation of Ti-Al-N films by an activated reactive evaporation (ARE) method

被引：0
|
作者：
Ide, Yukio [1 ]
Inada, Kazunori [1 ]
Nakamura, Takashi [1 ]
Maeda, Masafumi [1 ]
机构：
[1] Industrial Technology Inst Yamaguchi, Prefectural Government, Yamaguchi, Japan
来源：
Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals | 1998年 / 62卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：98 / 105
相关论文
共 50 条
  • [31] New ternary nitride in the Ti-Al-N system
    Lee, HD
    Petuskey, WT
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1997, 80 (03) : 604 - 608
  • [32] Theory of the ternary layered system Ti-Al-N
    Holm, B
    Ahuja, R
    Li, S
    Johansson, B
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) : 9874 - 9877
  • [33] Influence of Nb on the phase stability of Ti-Al-N
    Mayrhofer, Paul H.
    Rachbauer, Richard
    Holec, David
    SCRIPTA MATERIALIA, 2010, 63 (08) : 807 - 810
  • [34] Effect of deposition temperature on the physico-chemical behavior of Ti-Al-N thin films
    Seal, S
    Kale, A
    Desai, V
    Jimenez, D
    Sundaram, K
    Dahotre, NB
    Shah, S
    SURFACE ENGINEERING: IN MATERIALS SCIENCE I, 2000, : 403 - 413
  • [35] PHASE FORMATION AND CHARACTERIZATION OF HARD COATINGS IN THE TI-AL-N SYSTEM PREPARED BY THE CATHODIC ARC ION PLATING METHOD
    IKEDA, T
    SATOH, H
    THIN SOLID FILMS, 1991, 195 (1-2) : 99 - 110
  • [36] Pseudomorphic stabilization on crystal structure and mechanical properties of nanocomposite Ti-Al-N thin films
    Karimi, A
    Vasco, T
    Santana, A
    SURFACE ENGINEERING 2004 - FUNDAMENTALS AND APPLICATIONS, 2005, 843 : 161 - 166
  • [37] Effect of nitrogen gas on preparation of Ti-Al-N thin films by pulsed laser ablation
    Morimoto, A
    Shigeno, H
    Morita, S
    Yonezawa, Y
    Shimizu, T
    APPLIED SURFACE SCIENCE, 1998, 127 : 994 - 998
  • [38] Roughening kinetics of reactively sputter-deposited Ti-Al-N films on Si(100)
    Liu, ZJ
    Shum, PW
    Li, KY
    Shen, YG
    PHILOSOPHICAL MAGAZINE LETTERS, 2003, 83 (10) : 627 - 634
  • [39] Formation of Ti2AlN phase after post-heat treatment of Ti-Al-N films deposited by pulsed magnetron sputtering
    Yang, Ying
    Keunecke, Martin
    Stein, Christian
    Gao, Li-Jun
    Gong, Jun
    Jiang, Xin
    Bewilogua, Klaus
    Sun, Chao
    SURFACE & COATINGS TECHNOLOGY, 2012, 206 (10): : 2661 - 2666
  • [40] Preparation of ZnO films by activated reactive evaporation
    Swamy, H.Gopala
    Reddy, P.Jayarama
    Semiconductor Science and Technology, 1990, 5 (09): : 980 - 981
12345