Epitaxial growth of GaN on (1 0 0) β-Ga2O3 substrates by metalorganic vapor phase epitaxy

被引：0
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作者：
Shimamura, Kiyoshi [1 ]
Víllora, Encarnación G. [1 ]
Domen, Kay [2 ]
Yui, Keiichi [2 ]
Aoki, Kazuo [3 ]
Ichinose, Noboru [1 ]
机构：
[1] ZAIKEN, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan
[2] Eudyna Devices Inc., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
[3] Koha Co., Ltd., 2-6-8 Kouyama, Nerima-ku, Tokyo 176-0022, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2005年 / 44卷 / 1-7期
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