Growth evolution of cubic-GaN on sapphire (0 0 0 1) substrate by metalorganic molecular beam epitaxy

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作者：
Suda, Jun [1 ]
Kurobe, Tatsuro [1 ]
Matsunami, Hiroyuki [1 ]
机构：
[1] Dept. of Electron. Sci. and Eng., Kyoto University, 606-8501, Kyoto, Japan
来源：
Journal of Crystal Growth | 1999年 / 201卷
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页码：437 / 440
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