Depth profiling of Na in SiOx films by combination of chemical etching and secondary ion mass spectrometry

被引：0

作者：

Saito, Reiko ^{[1
]}

Kudo, Masahiro ^{[1
]}

机构：

[1] Toshiba Corp, Yokohama, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 02期

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摘要：

引用

页码：690 / 694

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[1] Depth profiling of Na in SiOx films by combination of chemical etching and secondary ion mass spectrometry
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (02): : 690 - 694
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