Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD

被引：0
|
作者：
Matsushita Electronics Corp, Osaka, Japan [1 ]
机构：
来源：
J Cryst Growth | / 1卷 / 185-189期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Surface-structure-controlled heteroepitaxial growth of 3C-SiC(001)3 × 2 on Si(001): simulations and experiments
    Kitabatake, Makoto
    Greene, Joe E.
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (10): : 5261 - 5273
  • [22] Single phase 3C-SiC(001)/Si(001) growth by surface controlled epitaxy
    Kitabatake, M
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 113 - 116
  • [23] Growth and characterization of 3C-SiC/SiNx/Si structure
    Kim, Kwang Chul
    Park, Chan Il
    Nahm, Kee Suk
    Suh, Eun-Kyung
    Materials Science Forum, 2000, 338
  • [24] The growth and characterization of 3C-SiC/SiNx/Si structure
    Kim, KC
    Park, CI
    Nahm, KS
    Suh, EK
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 317 - 320
  • [25] Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD
    Beisenov, R.
    Ebrahim, R.
    Mansurov, Z. A.
    Tokmoldin, S. Zh.
    Mansurov, B. Z.
    Ignatiev, A.
    EURASIAN CHEMICO-TECHNOLOGICAL JOURNAL, 2013, 15 (01) : 25 - 29
  • [26] Growth of 3C-SiC nanowires on nickel coated Si(100) substrate using dichloromethylvinylsilane and diethylmethylsilane by MOCVD method
    Hyun, J. -S.
    Nam, S. -H.
    Kang, B. -C.
    Boo, J. -H.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 4, 2009, 6 (04): : 810 - 812
  • [27] Epitaxial growth of 3C-SiC on Si(001) using hexamethyldisilane and comparison with growth on Si(111)
    Teker, K
    Jacob, C
    Chung, J
    Hong, MH
    THIN SOLID FILMS, 2000, 371 (1-2) : 53 - 60
  • [28] The growth and characterization of GaN epilayers grown on Si(111) substrate using 3C-SiC intermediate layer
    Kang, JH
    Park, CI
    Jeon, SR
    Lim, KY
    Nahm, KS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 : S70 - S73
  • [29] GROWTH OF SINGLE CRYSTALLINE GAN FILM ON SI-SUBSTRATE USING 3C-SIC AS AN INTERMEDIATE LAYER
    TAKEUCHI, T
    AMANO, H
    HIRAMATSU, K
    SAWAKI, N
    AKASAKI, I
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 634 - 638
  • [30] Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates
    Cordier, Yvon
    Portail, Marc
    Chenot, Sebastien
    Tottereau, Olivier
    Zielinski, Marcin
    Chassagne, Thierry
    ADVANCES IN GAN, GAAS, SIC AND RELATED ALLOYS ON SILICON SUBSTRATES, 2008, 1068 : 57 - +
12345