Hot-electron InGaAs/InP heterostructure bipolar transistors with fT of 110 GHz

被引：0
|
作者：
Nottenburg, Richard N. [1 ]
Chen, Y.K. [1 ]
Panish, Morton B. [1 ]
Humphrey, D.A. [1 ]
Hamm, R. [1 ]
机构：
[1] AT&T Bell Lab, Murray Hill, NJ,, USA
来源：
Electron device letters | 1989年 / 10卷 / 01期
关键词：
Semiconducting Indium Compounds;
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学科分类号：
摘要：
A hot-electron InGaAs/InP heterostructure bipolar transistor (HBT) is discussed. A unity-current-gain cutoff frequency of 110 GHz and a maximum frequency of oscillation of 58 GHz are realized in transistors with 3.2 × 3.2-μm2 emitter size. Nonequilibrium electron transport, with an average electron velocity approaching 4 × 107 cm/s through the thin (650 angstrom) heavily doped (p = 5 × 1019 cm-3) InGaAs base and 3000-angstrom-wide collector space-charge region, results in a transit delay of 0.5 ps corresponding to an intrinsic cutoff frequency of 318 GHz.
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页码：30 / 32
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