Characterisation of degradation mechanisms in resonant tunnelling diodes

被引：0
|
作者：
Vogt, A. [1 ]
Brandt, M. [1 ]
Sigurdardottir, A. [1 ]
Schussler, M. [1 ]
Pena, D. [1 ]
Simon, A. [1 ]
Hartnagel, H.L. [1 ]
Rodewald, M. [1 ]
Roesner, M. [1 ]
Fuess, H. [1 ]
Goswami, S.N.N. [1 ]
Lal, K. [1 ]
机构：
[1] TH Darmstadt, Darmstadt, Germany
来源：
Microelectronics Reliability | 1997年 / 37卷 / 10-11期
关键词：
Number:; -; Acronym:; EC; Sponsor: European Commission;
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页码：1691 / 1694
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