Capacitance characterization of AlN/GaN double-barrier resonant tunnelling diodes

被引：10

作者：

Kurakin, A. M. ^{[1
,2
]}

Vitusevich, S. A. ^{[1
,2
]}

Danylyuk, S. V. ^{[1
,2
]}

Naumov, A. V. ^{[3
]}

Foxon, C. T. ^{[4
]}

Novikov, S. V. ^{[4
]}

Klein, N. ^{[1
,2
]}

Lueth, H. ^{[1
,2
]}

Belyaev, A. E. ^{[3
]}

机构：

[1] Res Ctr Julich, Inst Thin Films & Interfaces, D-52425 Julich, Germany

[2] Res Ctr Julich, CNI Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany

[3] NASU, Inst Semiconduct Phys, UA-03028 Kiev, Ukraine

[4] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

关键词：

D O I：

10.1002/pssc.200565156

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the electrical characterization of AlN/GaN/AlN double-barrier resonant tunnelling diodes (RTDs) using steady-state current-voltage and capacitance-voltage (C-V) characteristics in a wide frequency range with 2 kHz steps. The C-V characteristics of a double-barrier RTD show different behaviour under forward and reverse polarities and a strong dependence on frequency. The monotonous growth of capacitance at forward bias was registered, while a more complicated dependence was observed at reverse voltages. In order to analyse this dependence, a self-consistent calculation of the potential profile of the structure was performed taking into account polarization effects at the AlN/GaN interfaces. The peculiarities are analysed in the model of possible charge trapping at the interface states. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2265 / 2269

页数：5

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