Microwave-induced dc voltages in BaPb1-xBixO3 bicrystal Josephson junctions

被引：0
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作者：
Fuke, Hiroyuki [1 ]
Hayashi, Kunihiko [1 ]
Kanke, Yukio [1 ]
Enomoto, Youichi [1 ]
机构：
[1] Superconducting Research Lab-ISTEC, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1995年 / 34卷 / 9 B期
关键词：
Barium lead bismuth oxide - Bicrystal - Microwave radiation - Microwave-induced dc voltage - Shapiro step - Strontium titanium oxide - Superconductor-insulator-superconductors junctions;
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摘要：
We have fabricated an artificial BaPb1-xBixO3 grain boundary tunnel junction on a SrTiO3 bicrystal substrate. Current-voltage characteristics exhibit supercurrent and quasi-particle tunneling which is commonly observed for superconductor-insulator-superconductor (SIS) type junctions. A Shapiro step is observed for a junction with a large area under microwave radiation. On the other hand, microwave-induced dc voltages at zero bias current are observed for a narrow junction. This dependence on the junction width indicates that generation of the microwave-induced voltages is related to normal resistance or capacitance of a junction.
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