Microwave-induced dc voltages in BaPb1-xBixO3 bicrystal Josephson junctions

被引：0

作者：

Fuke, Hiroyuki ^{[1
]}

Hayashi, Kunihiko ^{[1
]}

Kanke, Yukio ^{[1
]}

Enomoto, Youichi ^{[1
]}

机构：

[1] Superconducting Research Lab-ISTEC, Tokyo, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1995年 / 34卷 / 9 B期

关键词：

Barium lead bismuth oxide - Bicrystal - Microwave radiation - Microwave-induced dc voltage - Shapiro step - Strontium titanium oxide - Superconductor-insulator-superconductors junctions;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have fabricated an artificial BaPb1-xBixO3 grain boundary tunnel junction on a SrTiO3 bicrystal substrate. Current-voltage characteristics exhibit supercurrent and quasi-particle tunneling which is commonly observed for superconductor-insulator-superconductor (SIS) type junctions. A Shapiro step is observed for a junction with a large area under microwave radiation. On the other hand, microwave-induced dc voltages at zero bias current are observed for a narrow junction. This dependence on the junction width indicates that generation of the microwave-induced voltages is related to normal resistance or capacitance of a junction.

引用

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