DEVICE-CIRCUIT CONSIDERATIONS IN THE DESIGN OF BROADBAND MESFET AMPLIFIERS.

被引：0
|
作者：
Basawapatna, Ganesh R.
机构：
来源：
| 1977年
关键词：
MESFET AMPLIFIERS;
D O I：
暂无
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学科分类号：
摘要：
The design of a 10 MHz to 2. 5 GHz MESFET amplifier is discussed. Comparisons are made of circuit considerations and their relations to device parameters for amplifiers with and without feedback. A significant requirement of the amplifier was low distortion at output levels of greater than 16 dbm. The considerations involved in such a design are also discussed, and the performance of two such amplifiers is given.
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页码：142 / 145
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