Charge trapping effects in gate oxide under Fowler-Nordheim electron injection at temperature of 77K

被引：0

作者：

Liu, Weidong ^{[1
]}

Li, Zhijian ^{[1
]}

Liu, Litian ^{[1
]}

机构：

[1] Tsinghua Univ, Beijing, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1996年 / 17卷 / 08期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：601 / 606

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