Shallow donor impact ionization in n-InP and n-GaAs: influence of doping and compensation

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作者：
Kundrotas, J. [1 ]
Dargys, A. [1 ]
Cesna, A. [1 ]
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[1] Semiconductor Physics Inst, Vilnius, Lithuania
来源：
| 1996年 / Institute of Physics Publishing Ltd, Bristol, United Kingdom卷 / 11期
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