共 50 条
- [31] DOPING INHOMOGENEITIES AND COMPENSATION BEHAVIOR OF N-TYPE GAAS AND INP KVANTOVAYA ELEKTRONIKA, 1988, 15 (11): : 2301 - 2303
- [33] Electrical properties of nanometer-sized Schottky contacts on n-GaAs and n-InP formed by in situ electrochemical process JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (7B): : 4609 - 4615
- [36] Gunn Effect in n-InP MOSFET at Positive Gate Bias and Impact Ionization Conditions 2014 INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE), 2014,
- [37] INFLUENCE OF A MAGNETIC-FIELD ON IONIZATION-ENERGY OF SHALLOW DONOR IMPURITIES IN GAAS AND INP SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (09): : 1191 - 1193
- [38] New porosification of n-InP and n-GaAs in acidic liquid ammonia at 223 K:: unusual morphologies associated to distinguished electrochemical behaviours PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (05): : 1286 - 1291
- [39] The influence of fluctuations on shallow impurity line broadening and quality diagnose of n-GaAs PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 214 (01): : 69 - 79
- [40] THE INFLUENCE OF SULFUR ON THE STRUCTURE OF N-GAAS KOVOVE MATERIALY-METALLIC MATERIALS, 1986, 24 (01): : 94 - 101