Quantitative study of isoelectroncc copper pairs by photoluminescence and deep level transient spectroscopy

被引：0
|
作者：
Institute of Semiconductor Physics, Frankfutt an der Oder, Germany [1 ]
机构：
来源：
Mater. Sci. Technol. | / 7卷 / 676-679期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
8
引用
收藏
相关论文
共 50 条
  • [21] Characterization of iron in silicon by low-temperature photoluminescence and deep-level transient spectroscopy
    Nakamura, Minoru
    Murakami, Susumu
    Udono, Haruhiko
    JOURNAL OF APPLIED PHYSICS, 2018, 123 (10)
  • [22] Quantitative optical variants of deep level transient spectroscopy: application to high purity germanium
    Blondeel, A
    Clauws, P
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 71 : 233 - 237
  • [23] A QUANTITATIVE TREATMENT FOR DEEP LEVEL TRANSIENT SPECTROSCOPY UNDER MINORITY-CARRIER INJECTION
    FOURCHES, N
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) : 209 - 214
  • [24] Deep levels in the MBE ZnO: As/n-GaN diodes - Photoluminescence, electrical properties and deep level transient spectroscopy
    Zielony, E.
    Przezdziecka, E.
    Placzek-Popko, E.
    Lisowski, W.
    Stachowicz, M.
    Paradowska, K. M.
    Jakiela, R.
    Kozanecki, A.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 742 : 296 - 303
  • [25] Deep levels in the MBE ZnO:As/n-GaN diodes – Photoluminescence, electrical properties and deep level transient spectroscopy
    Zielony, E. (eunika.zielony@pwr.edu.pl), 1600, Elsevier Ltd (742):
  • [26] Depth progression of dissociation reaction of the 1.014-eV photoluminescence copper center in copper-diffused silicon crystal measured by deep-level transient spectroscopy
    Nakamura, Minoru
    Murakami, Susumu
    APPLIED PHYSICS LETTERS, 2011, 98 (14)
  • [27] A STUDY OF DEEP LEVEL IN BULK NORMAL-INP BY TRANSIENT SPECTROSCOPY
    MCAFEE, SR
    CAPASSO, F
    LANG, DV
    HUTCHINSON, A
    BONNER, WA
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6158 - 6164
  • [28] Deep Level Transient Spectroscopy study of dislocations in SiGe/Si heterostructures
    Lu, Jinggang
    Park, Yongkook
    Rozgonyi, George A.
    SEMICONDUCTOR DEFECT ENGINEERING-MATERIALS, SYNTHETIC STRUCTURES AND DEVICES II, 2007, 994 : 251 - +
  • [29] DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY IN N-TYPE INP
    LIM, H
    SAGNES, G
    BASTIDE, G
    ROUZEYRE, M
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3317 - 3320
  • [30] STUDY OF NONRADIATIVE RECOMBINATION IN GAP BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
    HENRY, CH
    LANG, DV
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) : 745 - 745
12345